Lecture 1 - Introduction and Motivation
Lecture 2 - Review of MOSFET operation - I
Lecture 3 - Review of MOSFET operation - II
Lecture 4 - Basic charge model - I
Lecture 5 - Basic charge model - II
Lecture 6 - Basic charge model - III
Lecture 7 - Basic charge model - IV
Lecture 8 - Basic charge model - V
Lecture 9 - Basic charge model - VI
Lecture 10 - Basic charge model - VII
Lecture 11 - Basic charge model - VIII
Lecture 12 - Basic charge model - IX
Lecture 13 - Basic charge model - X
Lecture 14 - Minimum energy point - I
Lecture 15 - Minimum energy point - II
Lecture 16 - Minimum energy point - III
Lecture 17 - Transistor sizing for combinational circuit - I
Lecture 18 - Transistor sizing for combinational circuit - II
Lecture 19 - Transistor sizing for asymmetric combinational circuits
Lecture 20 - Charging and discharging mechanism in NTV combinational gates
Lecture 21 - Effective current for NTV inverter
Lecture 22 - Effective current for NTV combinational gates - I
Lecture 23 - Effective current for NTV combinational gates - II
Lecture 24 - Effective current for NTV combinational gates - III
Lecture 25 - Combinational circuit design considering variations - I
Lecture 26 - Combinational circuit design considering variations - II
Lecture 27 - Buffer design considering INWE
Lecture 28 - Decoder design considering INWE
Lecture 29 - Flip-flop operation
Lecture 30 - Warning flip-flops design and operation
Lecture 31 - Single phase flip-flops design and operation
Lecture 32 - Consideration of radiation effects in NTV
Lecture 33 - Radiation-hardened NTV sequential circuit elements
Lecture 34 - Level shifters for multi-Vdd domains
Lecture 35 - Introduction to 6T SRAM
Lecture 36 - Stability and Reliability Issues in 6T SRAM
Lecture 37 - Read and Write-Assist Circuits in 6T SRAM
Lecture 38 - Physical Insights into Channel Charge Distribution
Lecture 39 - FinFET based Standard Cell Design
Lecture 40 - Example problems